DESCRIPTION

The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

The device is designed for use in lighting applications and low cost switch-mode power supplies.

■ STMicroelectronics PREFERRED SALESTYPE

■ NPN TRANSISTOR

■ HIGH VOLTAGE CAPABILITY

■ LOW SPREAD OF DYNAMIC PARAMETERS

■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION

■ VERY HIGH SWITCHING SPEED

■ THROUGH HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX -1)

APPLICATIONS:

■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING