Description

The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

The device is designed for use as PFC in high frequency ballast half Bridge voltage fed topology.

General features

■ NPN Transistor

■ High voltage capability

■ Low spread of dynamic parameters

■ Minimum lot-to-lot spread for reliable operation

■ Very high switching speed

■ In compliance with the 2002/93/EC European Directive

Applications

■ Electronic ballast for fluorescent lighting

■ Dedicated for PFC solution in half-bridge

voltage fed topology.