Description

The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds. The device is designed for use as PFC in high frequency ballast half bridge voltage fed topology.

Features

■ High voltage capability

■ Low spread of dynamic parameters

■ Minimum lot-to-lot spread for reliable operation

■ Very high switching speed

Applications

■ Electronic ballast for fluorescent lighting

■ Dedicated for PFC solution in half-bridge voltage fed topology.