Description

This is a high voltage fast switching NPN power

transistor manufactured in multi epitaxial planar

technology. It uses a cellular emitter structure with

planar edge termination to enhance switching

speeds while maintaining a wide RBSOA.

Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast.

Features

■ High voltage capability

■ Very high switching speed

Applications

Four lamp electronic ballast for:

■ 120 V mains in push-pull configuration

■ 277 V mains in half bridge current feed configuration