DESCRIPTION

The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.

■ HIGH VOLTAGE CAPABILITY

■ LOW SPREAD OF DYNAMIC PARAMETERS

■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION

■ VERY HIGH SWITCHING SPEED

■ LARGE RBSOA

APPLICATIONS

■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING