DESCRIPTION

The AM81719-030 is a high power silicon NPN bipolar transistor designed for Class C, CW communications and telemetry applications in the 1.75 - 1.85 GHz frequency range.

An emitter site ballasted refractory/gold overlay die geometry computerized automatic wire bonding is employed to ensure long term reliability and product consistency.

AM81719-030 is supplied in the industry-standard AMPAC hermetic metal/ceramic package.

■ REFRACTORY/GOLD METALLIZATION

■ EMITTER SITE BALLASTED

■ LOW THERMAL RESISTANCE

■ INPUT/OUTPUT MATCHING

■ OVERLAY GEOMETRY

■ METAL/CERAMIC HERMETIC PACKAGE

■ POUT = 28 W MIN. WITH 6.7 dB GAIN