DESCRIPTION

The AM80814-005 device is a high power Class C transistor specifically designed for L-Band radar pulsed driver applications.

This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 5:1 output VSWR at rated RF conditions. Low thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.

The AM80814-005 is supplied in the IMPAC™ Hermetic Metal/Ceramic package with internal Input/Output matching structures.

■ REFRACTORY/GOLD METALLIZATION

■ EMITTER SITE BALLASTED

■ 5:1 VSWR CAPABILITY

■ LOW THERMAL RESISTANCE

■ INPUT/OUTPUT MATCHING

■ OVERLAY GEOMETRY

■ METAL/CERAMIC HERMETIC PACKAGE

■ POUT = 5.0 W MIN. WITH 8.5 dB GAIN