DESCRIPTION

The AM80610-030 is a high power, common base NPN silicon bipolar device optimized for CW operation in the 620 - 960 MHz frequency range.

AM80610-030 utilizes a rugged, overlay, emitter ballasted L-Band die geometry to achieve high gain and collector efficiency and is suitable for driver or output stage use in Class C power amplifiers. Typical applications include military communications, ECM, and test equipment.

The AM80610-030 is provided in the industry standard, metal/ceramic AMPAC hermetic package.

■ REFRACTORY/GOLD METALLIZATION

■ EMITTER SITE BALLASTED

■ INPUT/OUTPUT MATCHING

■ METAL/CERAMIC HERMETIC PACKAGE

■ POUT = 30 W MIN. WITH 8.5 dB GAIN