Description

This device is a NPN transistor manufactured

using new “PB-HDC” (power bipolar high density

current) technology. The resulting transistor

shows good gain linearity behavior.

Features

■ High breakdown voltage VCEO = 230 V

■ Complementary to 2STA1837

■ High transition frequency, typical fT = 100 MHz

Applications

■ Audio power amplifier

■ Drive stage amplifier