General Description

DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as Solar Power and UPS.

Features

 Low VCE(sat) Trench IGBT technology

 10μs short circuit capability

 Low switching loss

 Maximum junction temperature 175oC

 VCE(sat) with positive temperature coefficient

 Fast & soft reverse recovery anti-parallel FWD

 Lead free package

Typical Applications

 Solar Power

 Electronic welder

 Uninterruptible power supply