DESCRIPTION

STP1013 is the P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other bettery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed.

FEATURE

• -20V/-0.45A, RDS(ON) =520ohm

• @VGS =-4.5V

• -20V/-0.35A, RDS(ON) =700ohm

• @VGS =-2.5V

• -20V/-0.25A, RDS(ON) =950ohm

• @VGS =-1.8V

• Super high density cell design for extremely low RDS(ON)

• Exceptional low on-resistance and maximum DC current capability

• SOT-523 / SC89 package design