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SST34HF1641C-70-4E-LSE中文资料

厂家型号

SST34HF1641C-70-4E-LSE

文件大小

648.33Kbytes

页面数量

38

功能描述

16 Mbit Concurrent SuperFlash 2/4 Mbit SRAM ComboMemory

数据手册

下载地址一下载地址二

简称

SST

生产厂商

Silicon Storage Technology, Inc

中文名称

官网

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SST34HF1641C-70-4E-LSE数据手册规格书PDF详情

PRODUCT DESCRIPTION

The SST34HF16x1C ComboMemory devices integrate either a 1M x16 or 2M x8 CMOS flash memory bank with either a 128K x16 or 256K x16 CMOS SRAM memory bank in a multi-chip package (MCP). These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick-oxide tunneling injector to attain better reliability and manufacturability compared with alternate approaches. The SST34HF16x1C devices are ideal for applications such as cellular phones, GPS devices, PDAs, and other portable electronic devices in a low power and small form factor system.

FEATURES:

• Flash Organization: 1M x16 or 2M x8

• Dual-Bank Architecture for Concurrent Read/Write Operation

– Bottom Sector Protection

– 16 Mbit: 12 Mbit + 4 Mbit

• SRAM Organization:

– 2 Mbit: 128K x16

– 4 Mbit: 256K x16

• Single 2.7-3.3V Read and Write Operations

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption:

– Active Current: 25 mA (typical)

– SRAM Standby Current: 20 µA (typical)

• Hardware Sector Protection (WP#)

– Protects 4 outer most sectors (4 KWord) in the larger bank by holding WP# low and unprotects by holding WP# high

• Hardware Reset Pin (RST#)

– Resets the internal state machine to reading data array

• Byte Selection for Flash (CIOF pin)

– Selects 8-bit or 16-bit mode (56-ball package only)

• Sector-Erase Capability

– Uniform 2 KWord sectors

• Block-Erase Capability

– Uniform 32 KWord blocks

• Read Access Time

– Flash: 70 ns

– SRAM: 70 ns

• Erase-Suspend / Erase-Resume Capabilities

• Security ID Feature

– SST: 128 bits

– User: 128 bits

• Latched Address and Data

• Fast Erase and Program (typical):

– Sector-Erase Time: 18 ms

– Block-Erase Time: 18 ms

– Chip-Erase Time: 35 ms

– Program Time: 7 µs

• Automatic Write Timing

– Internal VPP Generation

• End-of-Write Detection

– Toggle Bit

– Data# Polling

– Ready/Busy# pin

• CMOS I/O Compatibility

• JEDEC Standard Command Set

• Packages Available

– 56-ball LFBGA (8mm x 10mm)

– 62-ball LFBGA (8mm x 10mm)

• All non-Pb (lead-free) devices are RoHS compliant

更新时间:2025-6-15 9:21:00
供应商 型号 品牌 批号 封装 库存 备注 价格
SST
24+
BGA
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
SST
20+
BGA
11520
特价全新原装公司现货
SST
23+
BGA
12500
一级代理,原装现货,价格优势
SST
2447
FBGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
SST
24+
BGA
9600
原装现货,优势供应,支持实单!
SST
21+
BGA
2000
全新原装 现货 价优
SST
23+
BGA
50000
全新原装正品现货,支持订货
SST
23+
BGA
28533
原盒原标,正品现货 诚信经营 价格美丽 假一罚十!
SST
22+
BGA
3000
原装正品,支持实单
SST
0726+
BGA
1000
进口原装现货假一赔万力挺实单

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  • Stanley
  • Stannol
  • STANSON
  • STARPOWER
  • STATEK
  • STATSCHIP
  • STC
  • STEALTH_MICROWAVE

Silicon Storage Technology, Inc

中文资料: 7495条

Silicon Storage Technology, Inc. (SST)是SuperFlash®技术的创造者,这是一种创新、高度可靠和多功能的NOR闪存技术。SST是Microchip Technology Inc.的全资子公司,专注于向代工厂、集成器件制造商(IDMs)和无晶圆厂半导体公司授权嵌入式非易失性存储器(NVM)技术,以满足不断增长的汽车、安全智能卡、物联网(IoT)、人工智能(AI)、工业和消费市场中的应用需求。 SST拥有超过190名员工,办事处分布在美国、欧洲和亚洲,设有专门的工艺、设计、测试和可靠性团队,致力于与客户合作,轻松地将其独特、可靠且经过专利保护的技术集成到