PRODUCT DESCRIPTION

The SST34HF1621/1641 ComboMemory devices integrate a 1M x16 CMOS flash memory bank with a 256K x8/128K x16 or 512K x8/ 256K x16 CMOS SRAM memory bank in a Multi-Chip Package (MCP). These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick oxide tunneling injector to attain better reliability and manufacturability compared with alternate approaches. The SST34HF1621/1641 devices are ideal for applications such as cellular phones, GPSs, PDAs and other portable electronic devices in a low power and small form factor system.

FEATURES:

• Flash Organization: 1M x16

• Dual-Bank Architecture for Concurrent Read/Write Operation

– 16 Mbit: 12 Mbit + 4 Mbit

• SRAM Organization:

– 2 Mbit: 256K x8 or 128K x16

– 4 Mbit: 512K x8 or 256K x16

• Single 2.7-3.3V Read and Write Operations

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption:

– Active Current: 25 mA (typical)

– Standby Current: 20 µA (typical)

• Hardware Sector Protection (WP#)

– Protects 4 outer most sectors (4 KWord) in the larger bank by holding WP# low and unprotects by holding WP# high

• Hardware Reset Pin (RST#)

– Resets the internal state machine to reading data array

• Sector-Erase Capability

– Uniform 1 KWord sectors

• Block-Erase Capability

– Uniform 32 KWord blocks

• Read Access Time

– Flash: 70 and 90 ns

– SRAM: 70 and 90 ns

• Latched Address and Data

• Fast Erase and Word-Program:

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Word-Program Time: 14 µs (typical)

– Chip Rewrite Time: 8 seconds (typical)

• Automatic Write Timing

– Internal VPP Generation

• End-of-Write Detection

– Toggle Bit

– Data# Polling

– Ready/Busy# pin

• CMOS I/O Compatibility

• JEDEC Standard Command Set

• Conforms to Common Flash Memory Interface (CFI)

• Packages Available

– 56-ball LFBGA (8mm x 10mm)