GENERAL DESCRIPTION

SVD8N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.

FEATURES

* 8A,600V,RDS(on)˄typ˅=0.96W@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability