GENERAL DESCRIPTION

SVD7N65AT/F is an N-channel enhancement mode power MOS

field effect transistor which is produced using Silan proprietary

S-RinTM structure DMOS technology. The improved planar stripe

cell and the improved guard ring terminal have been especially

tailored to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode.

These devices are widely used in AC-DC power suppliers, DC-DC

converters and H-bridge PWM motor drivers.