The HYM 368035S/GS-60 is a 32 MByte EDO-DRAM module organized as 8 388 608 words by 36-Bit in two banks assembled on a 72-pin single-in-line package comprising 24 HYB 5117305BJ 4M × 3 DRAMs in 300 mil wide SOJ-packages mounted together with 24 0.2 µF ceramic decoupling capacitors on a PC board.

Advanced Information

• 8 388 608 words by 36-Bit organization in 2 banks

• Fast access and cycle time

60 ns RAS access time

15 ns CAS access time

104 ns cycle time

• Hyper page mode (EDO) capability 25 ns cycle time

• Single + 5 V (± 10 ) supply

• Low power dissipation max. 7260 mW active

CMOS – 132 mW standby

TTL – 264 mW standby

• CAS-before-RAS refresh

RAS-only-refresh

Hidden-refresh

• 24 decoupling capacitors mounted on substrate

• All inputs, outputs and clocks fully TTL compatible

• 72 pin Single in-Line Memory Module (L-SIM-72-17) with 31.75 mm (1250 mil) height

• Utilizes 24 4M x 3 DRAM’s in 300 mil SOJ packages

• 2048 refresh cycles / 32 ms

• Optimized for use in byte-write parity applications

• Tin-Lead contact pads (HYM 368035S-60)

• Gold contact pads (HYM 368035GS-60)