位置:M470T6554CZ3-CE6 > M470T6554CZ3-CE6详情

M470T6554CZ3-CE6中文资料

厂家型号

M470T6554CZ3-CE6

文件大小

328.84Kbytes

页面数量

18

功能描述

DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC

数据手册

下载地址一下载地址二到原厂下载

生产厂商

SAMSUNG

M470T6554CZ3-CE6数据手册规格书PDF详情

Features

• Performance range

• JEDEC standard 1.8V ± 0.1V Power Supply

• VDDQ = 1.8V ± 0.1V

• 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin

• 4 Banks

• Posted CAS

• Programmable CAS Latency: 3, 4, 5

• Programmable Additive Latency: 0, 1 , 2 , 3 and 4

• Write Latency(WL) = Read Latency(RL) -1

• Burst Length: 4 , 8(Interleave/nibble sequential)

• Programmable Sequential / Interleave Burst Mode

• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)

• Off-Chip Driver(OCD) Impedance Adjustment

• On Die Termination with selectable values(50/75/150 ohms or disable)

• PASR(Partial Array Self Refresh)

• Average Refresh Period 7.8us at lower than a TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C

- support High Temperature Self-Refresh rate enable feature

• Package: 60ball FBGA - 64Mx8 , 84ball FBGA - 32Mx16

• All of Lead-free products are compliant for RoHS

M470T6554CZ3-CE6产品属性

  • 类型

    描述

  • 型号

    M470T6554CZ3-CE6

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC

更新时间:2025-8-17 15:08:00
供应商 型号 品牌 批号 封装 库存 备注 价格
SAMSUNG
三年内
1983
只做原装正品
Samsung
21+
标准封装
5000
进口原装,订货渠道!
SAMSUNG
22+
252
原装现货,假一罚十
SAMSUNG(三星半导体)
24+
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
SAMSUNG(三星半导体)
23+
FBGA
23870
军用单位指定合供方/只做原装,正品现货
SAMSUNG/三星
23+
NA
3000
只做原装正品价格和数量以咨询为准
SAMSUNG/三星
0703
DDR2SO-DIMM/512MBDDR2SO/
150
原装香港现货真实库存。低价
SAMSUNG/三星
23+
TSOP
7935
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
SAMSUNG(三星)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
SAMSUNG/三星
23+
BGA
50000
全新原装正品现货,支持订货