5.0 W, 150 V ZENER DIODES

• Hermetically Sealed in Glass\n• Rated at 5 W\n• Available in Axial and Square Tab Surface Mount (SMS) version\n• Available to TX, TXV, and Space Levels\n• Replacement for Microsemi UZ5706 and UZ5806 Series;

5.0 WATT 6.8 - 270 VOLTS ZENER DIODES

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5.8GHz Medium Power Amplifier

Description The CHA5215a is a MMIC multifunction integrating a 3-stage medium power amplifier, a gain control and an output detector. A high saturated output power allows a linear operating point for multichannel communication applications. The output power can be controlled thanks to the combina

K-Band 2-Stage Power Amplifier

DESCRIPTION The MGFC5215 is a GaAs MMIC chip especially designed for 27.5 ~ 30.0 GHz band Middle Power Amplifier (MPA) . FEATURES ● RF frequency : 27.5 to 30.0 GHz ● Linear gain : ³ 13 dB ● P1dB : ³ 23 dBm ● DC power : Vd = 5 V, Id1 + Id2 = 270 mA

Dual Bias Resistor Transistors

Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital

Dual Bias Resistor Transistors

Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital

Silicon NPN epitaxial planer transistor

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