5.8GHz Medium Power Amplifier

Description The CHA5215a is a MMIC multifunction integrating a 3-stage medium power amplifier, a gain control and an output detector. A high saturated output power allows a linear operating point for multichannel communication applications. The output power can be controlled thanks to the combina

5.8GHz Medium Power Amplifier

5.8GHz Medium Power Amplifier

Description The CHA5215a is a MMIC multifunction integrating a 3-stage medium power amplifier, a gain control and an output detector. A high saturated output power allows a linear operating point for multichannel communication applications. The output power can be controlled thanks to the combina

5.8GHz Medium Power Amplifier

Description The CHA5215a is a MMIC multifunction integrating a 3-stage medium power amplifier, a gain control and an output detector. A high saturated output power allows a linear operating point for multichannel communication applications. The output power can be controlled thanks to the combina

5.8GHz Medium Power Amplifier

Description The CHA5215a is a MMIC multifunction integrating a 3-stage medium power amplifier, a gain control and an output detector. A high saturated output power allows a linear operating point for multichannel communication applications. The output power can be controlled thanks to the combina

5.8GHz Medium Power Amplifier

Description The CHA5215a is a MMIC multifunction integrating a 3-stage medium power amplifier, a gain control and an output detector. A high saturated output power allows a linear operating point for multichannel communication applications. The output power can be controlled thanks to the combina

K-Band 2-Stage Power Amplifier

DESCRIPTION The MGFC5215 is a GaAs MMIC chip especially designed for 27.5 ~ 30.0 GHz band Middle Power Amplifier (MPA) . FEATURES ● RF frequency : 27.5 to 30.0 GHz ● Linear gain : ³ 13 dB ● P1dB : ³ 23 dBm ● DC power : Vd = 5 V, Id1 + Id2 = 270 mA

Dual Bias Resistor Transistors

Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital

Dual Bias Resistor Transistors

Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type ​​​​​​​ For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape packing and magazine packing