SURFACE MOUNT SILICON ZENER DIODES

VZ : 2.7 - 200 Volts PD : 2 Watts FEATURES : * Complete Voltage Range 2.7 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

SURFACE MOUNT SILICON ZENER DIODES

VZ : 2.7 - 200 Volts PD : 2 Watts FEATURES : * Complete Voltage Range 2.7 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

SURFACE MOUNT SILICON ZENER DIODES

VZ : 3.6 - 200 Volts PD : 2 Watts FEATURES : * Complete Voltage Range 3.6 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current

ZENER DIODES

FEATURES : * Complete Voltage Range 2.7 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

SURFACE MOUNT SILICON ZENER DIODES

Features Complete Voltage Range 3.6 to 200 Volts High peak reverse power dissipation High reliability Low leakage current

SURFACE MOUNT ZENER DIODES

FEATURES : * Complete Voltage Range 3.6 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current

SURFACE MOUNT ZENER DIODES

FEATURES : * Complete Voltage Range 3.6 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current MECHANICAL DATA * Case : SMA (DO-214AC) Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Lead formed for Surface mount * Polarity : Color ban

2000mW Surface Mount Zener Diodes

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.

NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

FEATURES * 140 Volt VCEO * 1 Amp continuous current * Ptot= 500 mW

Linear Output Type OPIC Light Detector

■ Features 1. Liner output 2. Two package according to mounting method Side-view type (IS445) Top-view type (IS455) 3. Capable of output voltage level adjustment due to external resistor ■ Applications 1. Copiers

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon Power Transistor . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 60 Watts Minimum Gain = 13 dB Efficiency = 55

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 140 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt