SURFACE MOUNT SILICON ZENER DIODES

VZ : 3.3 - 200 Volts PD : 1 Watt FEATURES : * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free MECHANICAL DATA * Case : SMA (DO-214AC) Molded plastic * Epoxy : UL94V-O rate flam

Zener Diode

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Zener Diodes

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SURFACE MOUNT SILICON ZENER DIODES

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SURFACE MOUNT SILICON ZENER DIODES

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Complete Voltage Range 3.3 to 200 Volts

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SURFACE MOUNT SILICON ZENER DIODES

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SURFACE MOUNT SILICON ZENER DIODES

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稳压二极管

Plastic Medium Power NPN Silicon Transistor

Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. • Suitable for Transformerless, Line–Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for Hig

POWER TRANSISTOR NPN SILICON

Plastic Medium Power NPN Silicon Transistor This device is designed for power output stages for television, radio, phonograph and other consumer product applications. Features • Suitable for Transformerless, Line−Operated Equipment • Thermopad Construction Provides High Power Dissipation Ratin

Silicon PNP Transistor Audio Amplifier, Switch (Compl to NTE123AP)

Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . .

Silicon Complementary Transistors General Purpose

Description: The NTE123A (NPN) and NTE159M (PNP) are widely used “Industry Standard” complementary transistors in a TO18 type case designed for applications such as medium–speed switching and amplifiers from audio to VHF frequencies. Features: ● Low Collector Saturation Voltage: 1V (Max) ● Hig

Silicon epitaxial planar type

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