Low Power Fast Switching Output Stages

Low Power Fast Switching Output Stages • For T.V Radio Audio Output Amplifiers

POWER TRANSISTOR NPN SILICON

Plastic Medium Power NPN Silicon Transistor This device is designed for power output stages for television, radio, phonograph and other consumer product applications. Features • Suitable for Transformerless, Line−Operated Equipment • Thermopad Construction Provides High Power Dissipation Ratin

Plastic Medium Power NPN Silicon Transistor

Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. • Suitable for Transformerless, Line–Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for Hig

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) ·DC Current Gain- : hFE = 30~240(Min) @ IC= 50mA APPLICATIONS ·Designed for power output stages for television, radio, phonograph and other consumer product applications.

0.5 A，350 V，NPN 双极功率晶体管

This device is designed for power output stages for television, radio, phonograph and other consumer product applications. • Suitable for Transformerless, Line-Operated Equipment\n• High Power Dissipation Rating for High Reliability\n• Pb-Free Package is Available;

封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR） 描述：TRANS NPN 350V 0.5A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Plastic Medium Power NPN Silicon Transistor

文件：61.88 Kbytes Page：3 Pages

0.5 A, 350 V NPN Bipolar Power Transistor

This device is designed for power output stages for television, radio, phonograph and other consumer product applications. • Suitable for Transformerless, Line-Operated Equipment\n• High Power Dissipation Rating for High Reliability\n• Pb-Free Package is Available;

Plastic Medium-PowerSilicon NPN Transistor

Plastic Medium Power NPN Silicon Transistor This device is designed for power output stages for television, radio, phonograph and other consumer product applications. Features • Suitable for Transformerless, Line−Operated Equipment • Thermopad Construction Provides High Power Dissipation Ratin

Plastic Medium Power NPN Silicon Transistor

文件：61.88 Kbytes Page：3 Pages

For T.V Radio Audio Output Amplifiers

文件：44 Kbytes Page：4 Pages

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS NPN 350V 0.5A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon PNP Transistor Audio Amplifier, Switch (Compl to NTE123AP)

Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . .

Silicon Complementary Transistors General Purpose

Description: The NTE123A (NPN) and NTE159M (PNP) are widely used “Industry Standard” complementary transistors in a TO18 type case designed for applications such as medium–speed switching and amplifiers from audio to VHF frequencies. Features: ● Low Collector Saturation Voltage: 1V (Max) ● Hig

Silicon epitaxial planar type

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