SURFACE MOUNT SILICON ZENER DIODES

FEATURES : * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

SURFACE MOUNT SILICON ZENER DIODES

FEATURES : * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

SURFACE MOUNT SILICON ZENER DIODES

FEATURES * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current

Surface Mount Silicon Zener Diodes

VZ : 3.3 - 200 Volts PD : 1 Watt Features ♦ Complete Voltage Range 3.3 to 200 Volts ♦ High peak reverse power dissipation ♦ High reliability ♦ Low leakage current ♦ Pb / RoHS Free

SURFACE MOUNT SILICON ZENER DIODES

Features ● Complete Voltage Range 3.3 to 300 Volts ● High peak reverse power dissipation ● High reliability ● Low leakage current

Complete Voltage Range 3.3 to 200 Volts

Features • Complete Voltage Range 3.3 to 200 Volts • High peak reverse power dissipation • High reliability • Low leakage current • RoHS compliant package

1W 15V Zener diode

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SURFACE MOUNT SILICON ZENER DIODES

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SURFACE MOUNT SILICON ZENER DIODES

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ZENER DIODES

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Surface Mount Zener diode

Photo Interrupters

Photo Interrupters Overview CNA1015 series is a transmissive photosensor series in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB • 100 Tested f

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB • 100 Tested f

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB • 100 Tested f

.050 NPN Phototransistors

PRODUCT DESCRIPTION A large area high sensitivity NPN silicon phototransistor in a flat lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments. The base connection is brought out allowing conventional transistor biasing. These devices