5-2000 MHz Medium Power GaAs HBT Amplifier

Product Description Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and cons

5-2000 MHz Medium Power GaAsHBT Amplifier

Product Description Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and con

5-2000 MHz Medium Power GaAs HBT Amplifier

5-2000 MHz medium power GaAs HBT amplifier

Customer Specification

Construction 1) Component 1 1 X 1 BUSBAR a) Conductor 12 (SOLID) AWG Tinned Copper 0.081

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