65nA低功耗负载开关

SX1801是一款超高效负载开关，具有典型的80nA超低静态电流。SX1801的输入电压范围从1.0V到5.5V。它能够提供2A的输出电流。\r\nSX1801提供超低静态电流IQ和关断电流ISD。通过减少泄漏电流，提高了整个系统的功率效率和运行寿命。\r\nSX1801提供极低的60毫欧导通电阻。反向电流保护和输出短路保护。反向保护在负载开关的导通和断开状态下都会激活。 • 输入电压从1V 到 5.5V\r\n• 60mΩ低内阻\r\n• 65nA 超低待机功耗\r\n• 150Ω快速放电电阻\r\n• 0.77*0.77 WLCSP-4B封装;

MICROWAVE POWER GaAs FET

DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits. FEATURES • Hig

TAPE CARRIER MICROWAVE POWER GaAs FET?

FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE?

FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE

1.8 GHz TRANSMIT/RECEIVE ANTENNA SWITCH GaAs MONOLITHIC INTEGRATED CIRCUIT

Designed primarily for use in DECT, Japan Personal Handy System (PHS), other wireless Personal Communication Systems (PCS) applications, and 2.4 GHz ISM band applications. The MRFIC1801 is a single pole, double throw reflective antenna switch featuring low insertion loss and high power handling ca

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1801 is a switching device which can be driven directly by a 2.5-V power source. The µPA1801 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be dri