N-channelMOSFET

GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingSAMWINsemiconductor’sadvancedplanarstripe,DMOStechnologyintendedforbatteryOperatedsystemslikeaDC-DCconvertermotorcontrol,ups,audioamplifier.Also,especiallydesignedtominimizeRDS(ON)

RectifierDiodes

FEATURES HighdensitycelldesignforultralowRps(on)®Excellentpackageforgoodheatdissipation FullycharacterizedAvalanchevoltageandcurrent®SpecialprocesstechnologyforhighESDcapability GoodstabilityanduniformitywithhighEas Excellentpackageforgoodheatdissipation

30VN-ChannelPower

Features VDS=30V,ID=90A RDS(ON),3.8mΩ(Typ)@VGS=10V RDS(ON),6.4mΩ(Typ)@VGS=4.5V Lowonresistance Lowgatecharge Fastswitching Lowreversetransfercapacitances

N-CHANNEL30V-0.0045??-80A-DPAK-IPAKPlanarSTripFET??MOSFET

Description ThisMOSFETisthelatestrefinementofSTMicroelectronicunique“SingleFeatureSize™”stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristics,lowgatechargeandlesscriticalaligmentstepstherefore

N-Channel30-V(D-S)MOSFET

文件：1.62203 Mbytes Page：7 Pages

90A竊?0VN-CHANNELMOSFET

文件：212.13 Kbytes Page：5 Pages