位置:首页 > IC中文资料第9028页 > SW50N06
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SW50N06 | N-Channel MOSFET [SEMIPOWER] General Description This power MOSFET is produced in CHMC with advanced VDMOS process, planar stripe. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics | ETCList of Unclassifed Manufacturers 未分类制造商 | ||
SW50N06 | 50A,60V Heatsink Planar N-Channel Power MOSFET General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220 | THINKISEMI 思祁半导体 | ||
SW50N06 | N-Channel 60-V (D-S) MOSFET 文件:981.21 Kbytes Page:7 Pages | VBSEMI 微碧半导体 | ||
N-channel MOSFET (TO-251 , TO-252) General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitab | SEMIPOWER 芯派科技 | |||
N-channel D-PAK/TO-220 MOSFET General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitabl | SEMIPOWER 芯派科技 | |||
N-channel Enhancement mode TO-220/TO-252 MOSFET General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Features ● High ruggedne | SEMIPOWER 芯派科技 | |||
N-channel Enhanced mode TO-252 MOSFET General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Features ● High ru | SEMIPOWER 芯派科技 | |||
N-channel MOSFET (TO-220F , TO-220) 文件:576.2 Kbytes Page:7 Pages | SEMIPOWER 芯派科技 | |||
N-channel D-PAK/TO-220 MOSFET | SEMIPOWER 芯派科技 | |||
低压MOSFET | SEMIPOWER 芯派科技 | |||
低压MOSFET | SEMIPOWER 芯派科技 | |||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 50N06is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mod | UTC 友顺 | |||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件:330.9 Kbytes Page:8 Pages | UTC 友顺 | |||
50A 60V N-channel Enhancement Mode Power MOSFET 文件:812.59 Kbytes Page:10 Pages | WXDH 东海半导体 | |||
50A 60V N-channel Enhancement Mode Power MOSFET 文件:808.72 Kbytes Page:10 Pages | WXDH 东海半导体 | |||
50A 60V N-channel Enhancement Mode Power MOSFET 文件:807.77 Kbytes Page:10 Pages | WXDH 东海半导体 |
SW50N06产品属性
- 类型
描述
- 型号
SW50N06
- 功能描述
N-Channel MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMWIN |
24+ |
NA/ |
14250 |
原厂直销,现货供应,账期支持! |
|||
SIW |
25+ |
QFN |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
SIW |
24+ |
QFN |
990000 |
明嘉莱只做原装正品现货 |
|||
SIW |
2450+ |
QFN |
9850 |
只做原装正品现货或订货假一赔十! |
|||
原装 |
25+ |
TO-220 |
20300 |
原装特价SW50N06即刻询购立享优惠#长期有货 |
|||
SIW |
2023+ |
QFN |
2516 |
专注全新正品,优势现货供应 |
|||
SW |
18+ |
TO220 |
85600 |
保证进口原装可开17%增值税发票 |
|||
SAMWIN |
24+ |
TO-220 |
12000 |
原装正品真实现货杜绝虚假 |
|||
新 |
5 |
全新原装 货期两周 |
|||||
SW |
2025+ |
TO-252 |
4835 |
全新原厂原装产品、公司现货销售 |
SW50N06芯片相关品牌
SW50N06规格书下载地址
SW50N06参数引脚图相关
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- SW535G
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- SW-528
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- SW-524
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- SW-488
- SW-485
- SW-475
- SW-461
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2019-12-25
DdatasheetPDF页码索引
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