N-channel Enhancement mode TO-220/TO-252 MOSFET

General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Features ● High ruggedne

低压MOSFET

N-channel Enhanced mode TO-252 MOSFET

General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Features ● High ru

低压MOSFET

50 Amps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 50N06is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mod

50 Amps, 60 Volts N-CHANNEL POWER MOSFET

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50A 60V N-channel Enhancement Mode Power MOSFET

文件：812.59 Kbytes Page：10 Pages

50A 60V N-channel Enhancement Mode Power MOSFET

文件：808.72 Kbytes Page：10 Pages

50A 60V N-channel Enhancement Mode Power MOSFET

文件：807.77 Kbytes Page：10 Pages