Integral TTL Driver

Description M/A-COM’s SW-314 is a GaAs MMIC SP4T absorptive switch with an integral silicon ASIC driver. This device is in a 24-lead ceramic surface mount package. These switches exhibit excellent performance from DC to 3 GHz, with very low DC power dissipation. The SW-314 is ideally suited for R

GaAs SP4T Absorptive Switch, DC - 3 GHz

Description M/A-COM’s SW-314 is a GaAs MMIC SP4T absorptive switch with an integral silicon ASIC driver. This device is in a 24-lead ceramic surface mount package. These switches exhibit excellent performance from DC to 3 GHz, with very low DC power dissipation. The SW-314 is ideally suited for R

GaAs SP4T Absorptive Switch, DC-3.0 GHz

Description M/A-COM’s SW-314-PIN is a GaAs MMIC SP4T absorptive switch with an integral silicon ASIC driver. This device is in a 24-lead ceramic surface mount package. These switches exhibit excellent performance from DC to 3 GHz, with very low DC power dissipation. The SW-314-PIN is ideally suit

GaAs SP4T Absorptive Switch

·Integral TTL Driver\n·Isolation: 50 dB @ 1 GHz\n·Ultra Low DC Power Consumption\n·Hermetic Surface Mount Package\n·50 Ω Nominal Impedance\n·MIL-STD-883 Screening Available\n·Lead-Free CR-14 Package\n·RoHS* Compliant;

GaAs SP4T Absorptive Switch, DC-3.0 GHz

Description M/A-COM’s SW-314-PIN is a GaAs MMIC SP4T absorptive switch with an integral silicon ASIC driver. This device is in a 24-lead ceramic surface mount package. These switches exhibit excellent performance from DC to 3 GHz, with very low DC power dissipation. The SW-314-PIN is ideally suit

封装/外壳：CR-14 包装：托盘 描述：IC RF SWITCH SP4T 3GHZ CR-14 RF/IF，射频/中频和 RFID 射频开关

包装：盒 描述：EVAL BOARD FOR SW-314-PIN 开发板，套件，编程器 射频评估和开发套件，开发板

Low-voltage stabistor

DESCRIPTION Low-voltage stabilization diode in a hermetically-sealed SOD27 (DO-35) glass package. FEATURES • Low-voltage stabilization • Forward voltage range: 610 mV to 940 mV • Total power dissipation: max. 400 mW. APPLICATIONS • Low-voltage stabilization e.g. – Bias

丝印代码：H04；Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

丝印代码：H04；Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

RF POWER TRANSISTORS NPN SILICON

The RF Line NPN Silicon RF Power Transistors . . . designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts Minimum Gain = 10 dB • 100 Tested for Load Mismatch