High Power GaAs SPDT Switch DC - 3.0 GHz

Features ● +39 dBm Typ. 1 dB Compression Point, -8V Control ● +65 dBm Typ. 3rd Order Intercept, -8V Control ● Insertion Loss of 0.4 dB Typical ● Low Power Consumption ● Fast Switching Speed

High Power GaAs SPDT Switch DC - 3.0 GHz

VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor delivers an output power of 100 W in class-B operation at a supply voltage of 50 V. The transistor is encapsulated in a 6-lead, SOT

Low Power Transceiver Chip

DESCRIPTION The DS276 Line-Powered RS-232 Transceiver Chip is a CMOS device that provides a low-cost, very low-power interface to RS-232 serial ports. The receiver input translates RS-232 signal levels to common CMOS/TTL levels. The transmitter can be used with independently supplied positive a

Silicon Schottky Barrier Diode for Mixer

Features • High forward current, Low capacitance. • Ultra small Flat Package (UFP) is suitable for surface mount design.

Round Type

Round Type φ 3.2 mm Series

Round Type

文件：32 Kbytes Page：1 Pages