Drivers for GaAs FET Switches and Digital Attenuators

Introduction Many of M/A-COMs GaAs FET switches and digital attenuators cannot operate directly with simple TTL or CMOS logic, but instead require external circuits to provide appropriate control voltages. This application note, an update of M539, Drivers for GaAs FET MMIC Switches and Digital

PRINTED CIRCUIT TRANSFORMERS

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P R INT E D C I RCUI T T R ANS FORME R S

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Split Bobbin-Printed Circuit Transformers Single & Dual Primaries

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Matched GaAs SPDT Switch, 5 - 2000 MHz

Features • Low Insertion Loss, 1.0 dB Typical • Fast Switching Speed, 20 nS Typical • Ultra Low DC Power Consumption, 0.12 mA Typical • Integral TTL (SW-233) or CMOS (SW-236) Driver • 50 Ohm Nominal Impedance • MIL-STD-883 screening available

Matched GaAs SPDT Switch, 5 - 2000 MHz

Features • Low Insertion Loss, 1.0 dB Typical • Fast Switching Speed, 20 nS Typical • Ultra Low DC Power Consumption, 0.12 mA Typical • Integral TTL (SW-233) or CMOS (SW-236) Driver • 50 Ohm Nominal Impedance • MIL-STD-883 screening available

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. The complementary PNP types are BD236 and BD238 respectively. ■ SGS-THOMSON PREFERRED SALESTYPES

NPN video transistors

DESCRIPTION NPN video transistor in a SOT223 plastic package. PNP complements: BFQ256 and BFQ256A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability • Surface mounting. APPLICATIONS

NPN video transistors

DESCRIPTION NPN video transistor in a SOT223 plastic package. PNP complements: BFQ256 and BFQ256A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability • Surface mounting. APPLICATIONS

Silicon NPN Transistor Final RF Power Output (PO = 16W, 27MHz, SSB)

The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications.

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 12 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)