Epitaxial planar NPN silicon transistor

Descriptions • Complex type bipolar transistor Features • Reduce quantity of parts and mounting cost • High collector power dissipation : PC=300mW(Max.) • Two 2SC5343 chips in SOT-25 Package

Epitaxial planar NPN silicon transistor

Descriptions • Complex type bipolar transistor Features • Reduce quantity of parts and mounting cost • High collector power dissipation : PC=300mW(Max.) • Two 2SC5343 chips in SOT-25 Package

Small Signal Transistors

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The IRFP460 is supplied i

Silicon P-Channel JFET Transistor AF Amp

Absolute Maximum Ratings: Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Reverse Gate–Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Gate Current, IG . . . . . . .

Square Type

文件：31.65 Kbytes Page：1 Pages

Square Type

文件：31.86 Kbytes Page：1 Pages

ULTRAFAST RECTIFIERS 4.0 AMPERES 200-600 VOLTS

文件：100.14 Kbytes Page：6 Pages