N-Channel 200 V (D-S) 175 °C MOSFET

FEATURES • ThunderFET® power MOSFET • Low RDS - Qg figure-of-merit (FOM) • Maximum 175 °C junction temperature • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Synchronous rectification • Power supplies

N-Channel 200 V (D-S) 175 °C MOSFET

·ThunderFET® power MOSFET\n·Low RDS - Qg figure-of-merit (FOM)\n·Maximum 175 °C junction temperature;

N-Channel 200 V (D-S) 175 째C MOSFET

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isc N-Channel MOSFET Transistor

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N-Channel 200 V (D-S) 175 °C MOSFET

FEATURES • ThunderFET® power MOSFET • Low RDS - Qg figure-of-merit (FOM) • Maximum 175 °C junction temperature • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Synchronous rectification • Power supplies

1000V CERAMIC DISC

1000V CERAMIC DISC The 90000 series is a range of insulated disc, monolythic fixed ceramic capacitors. They are most commonly used in consumer electronics and telecommunication equipment.

Octal IMA/UNI PHY Device

Description The MT90220 device is targeted to systems implementing the ATM FORUM UNI specifications for T1/E1 rates or Inverse Multiplexing for ATM (IMA). In the MT90220 architecture, up to 8 physical and independent T1/E1 streams can be terminated through the utilization of off-the-shelf, tradit

Octal IMA/UNI PHY Device

Description The MT90220 device is targeted to systems implementing the ATM FORUM UNI specifications for T1/E1 rates or Inverse Multiplexing for ATM (IMA). In the MT90220 architecture, up to 8 physical and independent T1/E1 streams can be terminated through the utilization of off-the-shelf, tradit

N-Channel 200 V (D-S) 175 째C MOSFET

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