isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 64A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 21.6mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel 200 V (D-S) 175 °C MOSFET

·ThunderFET® power MOSFET\n·Low RDS - Qg figure-of-merit (FOM)\n·Maximum 175 °C junction temperature;

N-Channel 200 V (D-S) 175 째C MOSFET

文件：166.86 Kbytes Page：7 Pages

N-Channel 200 V (D-S) 175 째C MOSFET

文件：205.43 Kbytes Page：9 Pages

N-Channel 200 V (D-S) 175 째C MOSFET

文件：205.43 Kbytes Page：9 Pages

N-Channel 200 V (D-S) 175 째C MOSFET

文件：205.43 Kbytes Page：9 Pages

1000V CERAMIC DISC

1000V CERAMIC DISC The 90000 series is a range of insulated disc, monolythic fixed ceramic capacitors. They are most commonly used in consumer electronics and telecommunication equipment.

Octal IMA/UNI PHY Device

Description The MT90220 device is targeted to systems implementing the ATM FORUM UNI specifications for T1/E1 rates or Inverse Multiplexing for ATM (IMA). In the MT90220 architecture, up to 8 physical and independent T1/E1 streams can be terminated through the utilization of off-the-shelf, tradit

Octal IMA/UNI PHY Device

Description The MT90220 device is targeted to systems implementing the ATM FORUM UNI specifications for T1/E1 rates or Inverse Multiplexing for ATM (IMA). In the MT90220 architecture, up to 8 physical and independent T1/E1 streams can be terminated through the utilization of off-the-shelf, tradit

N-Channel 200 V (D-S) 175 째C MOSFET

文件：144.06 Kbytes Page：7 Pages