isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 15mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel 200 V (D-S) 175 °C MOSFET

N-Channel 200 V (D-S) 175 째C MOSFET

文件：169.53 Kbytes Page：7 Pages

N-Channel 200 V (D-S) 175 째C MOSFET

文件：219.18 Kbytes Page：9 Pages

N-Channel 200 V (D-S) 175 째C MOSFET

文件：219.18 Kbytes Page：9 Pages

N-Channel 200 V (D-S) 175 째C MOSFET

文件：219.18 Kbytes Page：9 Pages

Automotive N-Channel 200 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • AEC-Q101 qualified • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Automotive N-Channel 200 V (D-S) 175 째C MOSFET

文件：226.47 Kbytes Page：9 Pages

Automotive N-Channel 200 V (D-S) 175 째C MOSFET

文件：238.3 Kbytes Page：9 Pages

Automotive N-Channel 200 V (D-S) 175 째C MOSFET

文件：188.24 Kbytes Page：8 Pages