位置:首页 > IC中文资料第6083页 > SUM75N06
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =9.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
N-Channel 60-V (D-S), 175C MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | |||
N-Channel 60-V (D-S), 175 °C MOSFET 文件:110.8 Kbytes Page:6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
N-Channel 60-V (D-S), 175C MOSFET 文件:44.23 Kbytes Page:5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
N-Channel 60-V (D-S), 175 °C MOSFET 文件:110.8 Kbytes Page:6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
N-Channel 60-V (D-S), 175 °C MOSFET 文件:110.8 Kbytes Page:6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
TMOS POWER FET 75 AMPERES 60 VOLTS N–Channel Enhancement–Mode Silicon Gate TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components with higher power and lower RDS(on) capabilities. This advance | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 75 AMPERES 60 VOLTS N–Channel Enhancement–Mode Silicon Gate TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components with higher power and lower RDS(on) capabilities. This advance | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 75 AMPERES RDS(on) = 10.0 mOHM 60 VOLTS HDTMOS E-FET High Density Power FET N–Channel Enhancement–Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. De | MOTOROLA 摩托罗拉 | |||
Power MOSFET 75 AMPERES, 60 VOLTS RDS(on) = 9.5 mΩ Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available Typical Applications • Power Supplies • Converters • P | ONSEMI 安森美半导体 | |||
Power MOSFET 75 AMPERES, 60 VOLTS RDS(on) = 9.5 mΩ Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available Typical Applications • Power Supplies • Converters • P | ONSEMI 安森美半导体 |
SUM75N06产品属性
- 类型
描述
- 型号
SUM75N06
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
N-Channel 60-V(D-S), 175C MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
24+ |
D2PAK(TO-263) |
16800 |
绝对原装进口现货 假一赔十 价格优势!? |
|||
VISHAY |
25+ |
TO-263 |
18000 |
假一赔百原装正品价格优势实单可谈 |
|||
VISHAY |
19+ |
TO-263 |
9000 |
||||
VISHAY |
26+ |
原厂原封装 |
86720 |
代理授权原装正品价格最实惠 本公司承诺假一赔百 |
|||
VISHAY |
24+ |
TO-263 |
8866 |
||||
VISHAY/威世 |
22+ |
TO-263 |
20000 |
公司只做原装 品质保证 |
|||
SILICONIX |
24+ |
TO-263 |
6230 |
只做原装正品 |
|||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
VISHAY/威世 |
14+ |
TO-263 |
2400 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY/威世 |
2022+ |
D2PAK(TO |
12888 |
原厂代理 终端免费提供样品 |
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DdatasheetPDF页码索引
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