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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =9.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-Channel 60-V (D-S), 175C MOSFET

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 60-V (D-S), 175 °C MOSFET

文件:110.8 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 60-V (D-S), 175C MOSFET

文件:44.23 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 60-V (D-S), 175 °C MOSFET

文件:110.8 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 60-V (D-S), 175 °C MOSFET

文件:110.8 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

TMOS POWER FET 75 AMPERES 60 VOLTS

N–Channel Enhancement–Mode Silicon Gate TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components with higher power and lower RDS(on) capabilities. This advance

MOTOROLA

摩托罗拉

TMOS POWER FET 75 AMPERES 60 VOLTS

N–Channel Enhancement–Mode Silicon Gate TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components with higher power and lower RDS(on) capabilities. This advance

MOTOROLA

摩托罗拉

TMOS POWER FET 75 AMPERES RDS(on) = 10.0 mOHM 60 VOLTS

HDTMOS E-FET High Density Power FET N–Channel Enhancement–Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. De

MOTOROLA

摩托罗拉

Power MOSFET

75 AMPERES, 60 VOLTS RDS(on) = 9.5 mΩ Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available Typical Applications • Power Supplies • Converters • P

ONSEMI

安森美半导体

Power MOSFET

75 AMPERES, 60 VOLTS RDS(on) = 9.5 mΩ Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available Typical Applications • Power Supplies • Converters • P

ONSEMI

安森美半导体

SUM75N06产品属性

  • 类型

    描述

  • 型号

    SUM75N06

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    N-Channel 60-V(D-S), 175C MOSFET

更新时间:2026-5-24 23:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY
24+
D2PAK(TO-263)
16800
绝对原装进口现货 假一赔十 价格优势!?
VISHAY
25+
TO-263
18000
假一赔百原装正品价格优势实单可谈
VISHAY
19+
TO-263
9000
VISHAY
26+
原厂原封装
86720
代理授权原装正品价格最实惠 本公司承诺假一赔百
VISHAY
24+
TO-263
8866
VISHAY/威世
22+
TO-263
20000
公司只做原装 品质保证
SILICONIX
24+
TO-263
6230
只做原装正品
VISHAY
原厂封装
9800
原装进口公司现货假一赔百
VISHAY/威世
14+
TO-263
2400
一级代理,专注军工、汽车、医疗、工业、新能源、电力
VISHAY/威世
2022+
D2PAK(TO
12888
原厂代理 终端免费提供样品

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