HIGHEFFICIENTPLASTICSILICONRECTIFIERVOLTAGE:50TO1000VCURRENT:2.0A

VOLTAGE:50TO1000VCURRENT:2.0A FEATURE Lowpowerloss Highsurgecapability Ultrafastrecoverytimeforhighefficiency Hightemperaturesolderingguaranteed 250°C/10sec/0.375”leadlengthat5lbstension

30VDualN-andP-channelTrenchMSFET

Features •LowVGS(th):VGS(th)=1.0~3.0V •Smallfootprintduetosmallpackage •LowRGDS(on):N-ch,RDS(on)=24mΩ(@VGS=10V,ID=2.9A) P-ch,RDS(on)=66mΩ(@VGS=-10V,ID=-2.7A)

P-ChannelMOSFETusesadvancedtrenchtechnology

文件：1.74841 Mbytes Page：5 Pages

DualNandP-channelTrenchMOSFET

文件：638.89 Kbytes Page：13 Pages

USPowerSupplyCordwithIECConnectorC13,V-Lock,straight

Description -PowerCord,ProtectionclassI,Pintemperature70°C, -withV-Lockinterlockingsystem

1.0Watt-28Volts,ClassCMicrowave2000MHz

GENERALDESCRIPTION The2001isaCOMMONBASEtransistorcapableofproviding1WattsClassC,RFoutputpowerat2000MHz.GoldMetalizationanddiffusedballastingareusedtoprovidehighreliabilityandsupremeruggedness.ThetransistorusesafullyhermeticHighTemperatureSolderSealedpa

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusingDiffusedCollectortechnologyformorestableoperationVsbasedrivecircuitvariationsresultinginverylowworstcasedissipation. ■NEWSERIES,ENHANCEDPERFORMANCE ■FULLYINSULATEDPACKAGE(U.L.COMPLIANT)FOREASYMOUNTING ■HIGHVOLTAGECAP

HighVoltageHighCurrentDarlingtonArrays

HIGH-VOLTAGE,HIGH-CURRENTDARLINGTONARRAYS Ideallysuitedforinterfacingbetweenlow-levellogiccircuitryandmultipleperipheralpowerloads,theSeriesULN20xxA/Lhigh-voltage,high-currentDarlingtonarraysfeaturecontinuousloadcurrentratingsto500mAforeachofthesevendrivers.At

7½-DigitHighPerformanceMultimeter8½-DigitHighPerformanceMultimeter

文件：402.77 Kbytes Page：6 Pages