HIGH EFFICIENT PLASTIC SILICON RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 2.0A

VOLTAGE:50 TO 1000V CURRENT: 2.0A FEATURE Low power loss High surge capability Ultrafast recovery time for high efficiency High temperature soldering guaranteed 250°C/10sec/0.375”lead length at 5 lbs tension

30V Dual N-and P-channel Trench MSFET

Features • Low VGS(th): VGS(th)=1.0~3.0V • Small footprint due to small package • Low RGDS(on): N-ch, RDS(on)=24mΩ (@ VGS=10V, ID=2.9A) P-ch, RDS(on)=66mΩ (@ VGS=-10V, ID=-2.7A)

P-Channel MOSFET uses advanced trench technology

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Dual N and P-channel Trench MOSFET

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Low Voltage Trench MOSFETs

1.0 Watt - 28 Volts, Class C Microwave 2000 MHz

GENERAL DESCRIPTION The 2001 is a COMMON BASE transistor capable of providing 1 Watts Class C, RF output power at 2000 MHz. Gold Metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed pa

US Power Supply Cord with IEC Connector C13, V-Lock, straight

Description - Power Cord, Protection class I, Pin temperature 70 °C, - with V-Lock interlocking system

7½-Digit High Performance Multimeter 8½-Digit High Performance Multimeter

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Snap Bushings

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boxes and ancillary products

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