| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STW80NF06 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.01Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 |   | |
STW80NF06 | N-CHANNEL 60V - 0.0065OHM - 80A TO-220/D2PAK/TO-247 STripFET II POWER MOSFET Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a rem | STMICROELECTRONICS 意法半导体 | | |
STW80NF06 | N-channel 60V - 0.0065 - 80A TO-220/D2PAK/TO-247 STripFET II Power MOSFET 文件：314.15 Kbytes Page：14 Pages | STMICROELECTRONICS 意法半导体 | | |
STW80NF06 | Trans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-247 Tube | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
N-CHANNEL 60V - 0.0065OHM - 80A TO-220/D2PAK/TO-247 STripFET II POWER MOSFET Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a rem | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 60V - 0.0065OHM - 80A TO-220/D2PAK/TO-247 STripFET II POWER MOSFET Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a rem | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 60V - 0.0065OHM - 80A TO-220/D2PAK/TO-247 STripFET II POWER MOSFET Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a rem | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 60V - 0.0065OHM - 80A TO-220/D2PAK/TO-247 STripFET II POWER MOSFET Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a rem | STMICROELECTRONICS 意法半导体 | |
STW80NF06产品属性
- 类型
描述
- Maximum Power Dissipation：
300000mW
- Maximum Operating Temperature：
175°C
- Maximum Gate Source Voltage：
±20V
- Maximum Drain Source Voltage：
60V
- Maximum Continuous Drain Current：
80A
- Configuration：
Single
- Channel Type：
N
- Channel Mode：
Enhancement
- Category：
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
25+ |
TO-247 |
20000 |
原装，请咨询 |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
SEOUL |
2450+ |
SMD |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ST/意法 |
23+ |
TO |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
stm |
23+ |
NA |
586 |
专做原装正品,假一罚百! |
|||
ST |
25+23+ |
TO-247 |
24474 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
ST/意法半导体 |
21+ |
TO-247-3 |
8860 |
只做原装,质量保证 |
|||
SEOUL |
24+ |
LED |
24000 |
郑重承诺只做原装进口现货 |
|||
24+ |
394 |
本站现库存 |
|||||
ST/意法 |
22+ |
TO-247 |
21811 |
STW80NF06规格书下载地址
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原装正品 支持实单
2022-3-30STW6N95K5
製造商: STMicroelectronics 產品類型: MOSFET 技術: Si 安裝風格: Through Hole 封裝/外殼: TO-247-3 晶體管極性: N-Channel 通道數: 1 Channel Vds - 漏-源擊穿電壓: 950 V Id - C連續漏極電流: 9 A Rds On - 漏-源電阻: 1.25 Ohms Vgs - 閘極-源極電壓: - 30 V， + 30 V Vgs th - 門源門限電壓 :
2021-6-9STW8Q14C
STW8Q14C，全新原装当天发货或门市自取0755-82732291.
2020-3-15
DdatasheetPDF页码索引
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