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型号 功能描述 生产厂家 企业 LOGO 操作
STW50N65DM6

N-channel 650 V, 74 m typ., 33 A MDmesh DM6 Power MOSFET in a TO-247 package

Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM

STMICROELECTRONICS

意法半导体

STW50N65DM6

N-channel 650 V, 74 mOhm typ., 33 A MDmesh DM6 Power MOSFET in a TO-247 package

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching be • Fast-recovery body diode \n• Lower RDS(on) per area vs previous generation \n• Low gate charge, input capacitance and resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

STMICROELECTRONICS

意法半导体

N-channel 650 V, 74 m typ., 33 A, MDmesh DM6 Power MOSFET in a TO-220 package

Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM

STMICROELECTRONICS

意法半导体

N-channel 650 V, 74 m typ., 33 A, MDmesh DM6 Power MOSFET in a TO-220 package

Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM

STMICROELECTRONICS

意法半导体

STW50N65DM6产品属性

  • 类型

    描述

  • Package:

    TO-247

  • Grade:

    Industrial

  • VDSS(V):

    650

  • RDS(on)_max(@ VGS=10V)(Ω):

    0.091

  • Drain Current (Dc)_max(A):

    33

  • PTOT_max(W):

    250

  • Qg_typ(nC):

    52.5

  • Features:

    Fast recovery diode

  • Reverse Recovery Time_typ(ns):

    130

  • Qrr_typ(nC):

    650

  • Peak Reverse Current_nom(A):

    10

更新时间:2026-5-18 17:46:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
stm
23+
NA
586
专做原装正品,假一罚百!
ST
25+23+
TO-247
24474
绝对原装正品现货,全新深圳原装进口现货
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ST/意法半导体
21+
TO-247-3
8860
只做原装,质量保证
ST/意法半导体
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
STMicroelectronics
25+
N/A
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
STMicroelectronics
25+
N/A
20948
样件支持,可原厂排单订货!
SEOUL
2450+
SMD
8540
只做原装正品假一赔十为客户做到零风险!!
SEOUL
24+
LED
24000
郑重承诺只做原装进口现货
24+
394
本站现库存

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