| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STW50N65DM6 | N-channel 650 V, 74 m typ., 33 A MDmesh DM6 Power MOSFET in a TO-247 package Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM | STMICROELECTRONICS 意法半导体 | ||
STW50N65DM6 | N-channel 650 V, 74 mOhm typ., 33 A MDmesh DM6 Power MOSFET in a TO-247 package This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching be • Fast-recovery body diode \n• Lower RDS(on) per area vs previous generation \n• Low gate charge, input capacitance and resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected; | STMICROELECTRONICS 意法半导体 | ||
N-channel 650 V, 74 m typ., 33 A, MDmesh DM6 Power MOSFET in a TO-220 package Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM | STMICROELECTRONICS 意法半导体 | |||
N-channel 650 V, 74 m typ., 33 A, MDmesh DM6 Power MOSFET in a TO-220 package Features • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM | STMICROELECTRONICS 意法半导体 |
STW50N65DM6产品属性
- 类型
描述
- Package:
TO-247
- Grade:
Industrial
- VDSS(V):
650
- RDS(on)_max(@ VGS=10V)(Ω):
0.091
- Drain Current (Dc)_max(A):
33
- PTOT_max(W):
250
- Qg_typ(nC):
52.5
- Features:
Fast recovery diode
- Reverse Recovery Time_typ(ns):
130
- Qrr_typ(nC):
650
- Peak Reverse Current_nom(A):
10
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
stm |
23+ |
NA |
586 |
专做原装正品,假一罚百! |
|||
ST |
25+23+ |
TO-247 |
24474 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST/意法半导体 |
21+ |
TO-247-3 |
8860 |
只做原装,质量保证 |
|||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源! |
|||
STMicroelectronics |
25+ |
N/A |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
STMicroelectronics |
25+ |
N/A |
20948 |
样件支持,可原厂排单订货! |
|||
SEOUL |
2450+ |
SMD |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
SEOUL |
24+ |
LED |
24000 |
郑重承诺只做原装进口现货 |
|||
24+ |
394 |
本站现库存 |
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STW50N65DM6规格书下载地址
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製造商: STMicroelectronics 產品類型: MOSFET 技術: Si 安裝風格: Through Hole 封裝/外殼: TO-247-3 晶體管極性: N-Channel 通道數: 1 Channel Vds - 漏-源擊穿電壓: 950 V Id - C連續漏極電流: 9 A Rds On - 漏-源電阻: 1.25 Ohms Vgs - 閘極-源極電壓: - 30 V, + 30 V Vgs th - 門源門限電壓 :
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STW48N60DM2,当天发货0755-82732291全新原装现货或门市自取.
2020-10-25
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