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型号 功能描述 生产厂家 企业 LOGO 操作
STW15NB50FI

N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

STMICROELECTRONICS

意法半导体

N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

STMICROELECTRONICS

意法半导体

N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

STMICROELECTRONICS

意法半导体

N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

STMICROELECTRONICS

意法半导体

N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

STMICROELECTRONICS

意法半导体

N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

STMICROELECTRONICS

意法半导体

STW15NB50FI产品属性

  • 类型

    描述

  • 型号

    STW15NB50FI

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET

更新时间:2026-5-20 17:45:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
SEOUL
2450+
SMD
8540
只做原装正品假一赔十为客户做到零风险!!
ST/意法
23+
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
stm
23+
NA
586
专做原装正品,假一罚百!
ST
25+23+
TO-247
24474
绝对原装正品现货,全新深圳原装进口现货
ST/意法半导体
21+
TO-247-3
8860
只做原装,质量保证
SEOUL
24+
LED
24000
郑重承诺只做原装进口现货
24+
394
本站现库存
ST/意法
22+
TO-247
94502
ST
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货

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