位置：首页 > IC中文资料第8230页 > W15NB50
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
W15NB50 | N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 |   | |
W15NB50 | N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET | STMICROELECTRONICS 意法半导体 | | |
N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 | |
W15NB50产品属性
- 类型
描述
- 型号
W15NB50
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
25+ |
TO-3P |
20000 |
原装，请咨询 |
|||
ST |
23+ |
TO-3P |
16900 |
正规渠道,只有原装! |
|||
ST |
25+ |
TO3P |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
FAS |
24+ |
TOP-3 |
2000 |
本站现库存 |
|||
ST/意法 |
2023+ |
TO-247 |
6895 |
原厂全新正品旗舰店优势现货 |
|||
ST |
26+ |
TO-3P |
60000 |
只有原装 可配单 |
|||
ST |
25+ |
TO-3P |
20000 |
原装 |
|||
ST |
22+ |
TO-3P |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
ST/意法 |
2023+ |
TO-247 |
11000 |
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站 |
W15NB50规格书下载地址
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2019-10-10
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