位置：首页 > IC中文资料第8230页 > W15NB50
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
W15NB50 | N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 |   | |
W15NB50 | N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET | STMICROELECTRONICS 意法半导体 | | |
N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 | |
W15NB50产品属性
- 类型
描述
- 型号
W15NB50
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
WESTCODE |
23+ |
模块 |
362 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
|||
ST |
23+ |
TO-3P |
16900 |
正规渠道,只有原装! |
|||
WESTCODE |
24+ |
模块 |
6868 |
原装现货,可开13%税票 |
|||
ST |
25+ |
TO3P |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
AO/万代 |
TO-262 |
8012 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ST |
26+ |
TO-3P |
60000 |
只有原装 可配单 |
|||
ST/意法 |
2023+ |
TO-247 |
6895 |
原厂全新正品旗舰店优势现货 |
|||
WESTCODE |
24+ |
MODULE |
1000 |
全新原装现货 |
|||
FAS |
24+ |
TOP-3 |
2000 |
本站现库存 |
|||
ST/意法 |
25+ |
NA |
860000 |
明嘉莱只做原装正品现货 |
W15NB50规格书下载地址
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2019-10-10
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