N-CHANNEL 55V - 0.005 ohm -120A D짼PAK/TO-220/TO-247 STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 55V - 0.005廓 - 120A - D2PAK/TO-220/TO-247 STripFET??II Power MOSFET

文件：561.12 Kbytes Page：19 Pages

N-CHANNEL 55V - 0.005 ohm -120A D짼PAK/TO-220/TO-247 STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL 55V - 0.005 ohm -120A D짼PAK/TO-220/TO-247 STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

N-Channel 60 V (D-S) MOSFET

文件：1.43245 Mbytes Page：8 Pages

N-channel 55V - 0.005廓 - 120A - D2PAK/TO-220/TO-247 STripFET??II Power MOSFET

文件：561.12 Kbytes Page：19 Pages