isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=8.3A@ TC=25℃ ·Drain Source Voltage -VDSS= 1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.38Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Power MOSFET

DESCRIPTION ·Drain Current –ID= 8.3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.1Ω(typ)@VGS= 10V ·Fast-recovery body diode APPLICATIONS ·Switching applications

N-channel 1000V - 1.1廓 - 8.3A - TO-247 Zener - Protected SuperMESH??PowerMOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such s

N沟道1000V - 1.1 Ohm - 8.3A - TO-247有齐纳管保护的SuperMESH™功率MOSFET

N-channel 1000V - 1.1廓 - 8.3A - TO-247 Zener - Protected SuperMESH??PowerMOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such s