N - CHANNEL 600V - 0.69ohm - 10A - TO-247 PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N - CHANNEL 600V - 0.69ohm - 10A - TO-247 PowerMESH MOSFET

N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH TM IGBT

Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix S identifies a family optimized achieve minimum on-voltage drop for low frequency a

N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT

文件：387.24 Kbytes Page：13 Pages

N-channel 10A - 600V - TO-220FP PowerMESH TM IGBT

文件：273.61 Kbytes Page：13 Pages

N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT

文件：387.24 Kbytes Page：13 Pages

N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT

文件：387.24 Kbytes Page：13 Pages