型号 功能描述 生产厂家&企业 LOGO 操作
STW10NB60

N - CHANNEL 600V - 0.69ohm - 10A - TO-247 PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
STW10NB60

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH TM IGBT

Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix S identifies a family optimized achieve minimum on-voltage drop for low frequency a

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT

文件:387.24 Kbytes Page:13 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

N-channel 10A - 600V - TO-220FP PowerMESH TM IGBT

文件:273.61 Kbytes Page:13 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT

文件:387.24 Kbytes Page:13 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT

文件:387.24 Kbytes Page:13 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

STW10NB60产品属性

  • 类型

    描述

  • 型号

    STW10NB60

  • 功能描述

    MOSFET N-CH 600V 10A

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-5 19:19:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
2511
TO-3P
16900
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
ST
25+
TO-247
35628
独立分销商 公司只做原装 诚心经营 免费试样正品保证
ST
06+
TO-247
2380
原装
ST/意法
22+
3P
25000
只做原装进口现货,专注配单
ST
24+
TO-3P
1000
原装现货热卖
11+
28500
ST
24+
TO-247
2987
只售原装自家现货!诚信经营!欢迎来电!
24+
N/A
3000
ST/意法
23+
TO-247
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
ST/意法
24+
65230

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