N-channel 24V - 0.8mOHM - 280A - PowerSO-10 STripFET TM Power MOSFET

Description This product utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for high current OR-ing application. General features ■ RDS(on)*Qg industry’s benchmark ■ Conduction losses reduced ■ Low profile, very low parasitic inductance ■ Swi

N-channel 24 V, 0.8 mOhm, 120 A PowerSO-10

This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics’ unique “single feature size” strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high pa • RDS(on)*Qgindustry’s benchmark\n• Conduction losses reduced• Low profile, very low parasitic inductance\n• Switching losses reduced;

N-channel 24V - 0.8m廓 - 280A - PowerSO-10 STripFET??Power MOSFET

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N-channel 24V - 120A - TO-220 / D2PAK STripFET TM Power MOSFET

文件：474.32 Kbytes Page：14 Pages

N-channel 24V - 120A - TO-220 / D2PAK STripFET TM Power MOSFET

文件：474.32 Kbytes Page：14 Pages

N-channel 24V - 120A - TO-220 / D2PAK STripFET TM Power MOSFET

文件：474.32 Kbytes Page：14 Pages

N-channel 24V - 120A - TO-220 / D2PAK STripFET TM Power MOSFET

文件：474.32 Kbytes Page：14 Pages