丝印代码：LED625H；N-channel 650 V, 1.7 Ω typ., 4.5 A Power MOSFET in I2PAKFP, TO-220 and IPAK packages

Features • 100 avalanche tested • Extremely high dv/dt capability • Gate charge minimized • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • LED lighting applications Description These Power MOSFETs boast extremely low

Silicon Rectifier Fast Recovery

Description: The NTE625 and NTE626 are fast recovery silicon rectifiers in a 2–Lead TO220 type package designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers and low RF interference. Features: Low Forward Voltage High Current

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR625CTD series is supplied in the SOT428 surface mounting package. FEATURES • Low forward volt drop • Fast switching • Reverse surge ca

High performance low power mixer FM IF system with high-speed RSSI

DESCRIPTION The SA625 is pin-to-pin compatible with the SA605, but has faster RSSI rise and fall times. The SA625 is a high performance monolithic low-power FM IF system incorporating a mixer/oscillator, two limiting intermediate frequency amplifiers, quadrature detector, muting, logarithmic re

High performance low power mixer FM IF system with high-speed RSSI

DESCRIPTION The SA625 is pin-to-pin compatible with the SA605, but has faster RSSI rise and fall times. The SA625 is a high performance monolithic low-power FM IF system incorporating a mixer/oscillator, two limiting intermediate frequency amplifiers, quadrature detector, muting, logarithmic re

Phase Control SCR (300-400 Amperes 1200 Volts)

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