N-channel 950 V, 3 ohm typ, 4 A Zener-protected SuperMESH3

Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on resistance, superior dynamic performance and high avalanche capability, render

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=4.0A@ TC=25℃ ·Drain Source Voltage -VDSS=950V(Min) ·Static Drain-Source On-Resistance -RDS(on) =3.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N沟道950 V、3 Ohm、4 A有齐纳管保护的SuperMESH3(TM) 功率MOSFET，IPAK封装

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4.0A@ TC=25℃ ·Drain Source Voltage -VDSS=950V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 3.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 950 V, 3 ohm typ, 4 A Zener-protected SuperMESH3

Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on resistance, superior dynamic performance and high avalanche capability, render

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4A@ TC=25℃ ·Drain Source Voltage -VDSS= 950V(Min) -RDS(on) = 3.5Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 950 V, 3 ohm typ, 4 A Zener-protected SuperMESH3

Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on resistance, superior dynamic performance and high avalanche capability, render

N-channel 950 V, 3 廓 typ., 4 A Zener-protected SuperMESH3?? Power MOSFET in I2PAKFP package

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