600 V、8 A超快升压二极管 600 V、8 A超快升压二极管

This device is an ultrafast diode based on 600 V Pt doping planar technology.\n\n It can be used in hard switching conditions for power factor corrections. Its extremely low reverse recovery current reduces the switching power losses of the MOSFET and thus increases the overall application efficienc • Ultrafast recovery \n• Low reverse recovery current \n• Low thermal resistance \n• Higher frequency operation \n• Reduces switching and conduction losses \n• Insulated TO-220FPAC: \n •Insulating voltage = 2000 VRMS \n •Package capacitance = 12 pF;

Turbo 2 ultrafast high voltage rectifier

文件：100.59 Kbytes Page：8 Pages

Ultrafast High Voltage Rectifier Diode

FEATURES · Low Thermal Resistance · Low Reverse Recovery Current · Ultrafast Recovery APPLICATIONS · Power Supplies · Power Conversions Systems · Motor Drives

封装/外壳：TO-220-2 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 600V 8A TO220AC 分立半导体产品 二极管 - 整流器 - 单

Turbo 2 ultrafast high voltage rectifier

文件：100.59 Kbytes Page：8 Pages

Ultrafast Recovery Rectifier

文件：288.74 Kbytes Page：2 Pages

Turbo 2 ultrafast high voltage rectifier

文件：100.59 Kbytes Page：8 Pages

封装/外壳：TO-220-2 整包 包装：管件管件 描述：DIODE GEN PURP 600V 8A TO220FP 分立半导体产品 二极管 - 整流器 - 单

Steering Diode Arrays - ESD Suppressors

Features • (16kV) IEC 61000-4-2 capable • Fast Reverse Recovery Time • Fast Turn on Time • Low Capacitance • SMD Packages Applications • Signal Termination • Signal Conditioning • ESD Suppression • Transient Suppression

Renesas 16-Bit Single-Chip Microcomputer H8S Family/H8S/2500 Series

文件：6.41626 Mbytes Page：980 Pages