丝印代码：STTH803D；High frequency secondary rectifier

Features  Combines highest recovery and reverse voltage performance  Ultra-fast, soft and noise-free recovery  ECOPACK®2 compliant component for D²PAK on demand

HIGH FREQUENCY SECONDARY RECTIFIER

DESCRIPTION Single Fast Recovery Epitaxial Diode suited for Switch Mode Power Supply and high frequency DC/DC converters. Packaged in TO-220AC or D2PAK this device is especially intended for secondary rectification. FEATURES AND BENEFITS ■ COMBINES HIGHEST RECOVERY AND REVERSE VOLTAG

8.0A GLASS PASSIVATED ULTRAFAST DIODE

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封装/外壳：TO-220-2 包装：管件 描述：DIODE GEN PURP 300V 8A TO220AC 分立半导体产品 二极管 - 整流器 - 单

2 W, 806 to 905 MHz UHF POWER AMPLIFIERS

The RF Line UHF Power Amplifiers Capable of wide power range control as encountered in portable cellular radio applications (30 dB typical). • MHW803–2 806–870 MHz • Specified 7.5 Volt Characteristics RF Input Power = 1 mW (0 dBm) RF Output Power = 2 Watts Minimum Gain (VControl

DARLINGTON POWER TRANSISTORS COMPLEMENTARY

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

µPA803T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) • A Surface Mounting Package Adopted • Built-in 2 Transistors

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

µPA803T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) • A Surface Mounting Package Adopted • Built-in 2 Transistors