Ultrafast recovery - 1200 V diode

Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications in

1200 V，5 A超高速二极管

The high-quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics, and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long-term reliability. \n\n Such demanding applications include industri • Ultrafast and soft recovery \n• Very low conduction and switching losses \n• High frequency and/or high pulsed current operation \n• High reverse voltage capability \n• Operating Tj from -55 °C to 175 °C \n• High junction temperature \n• ECOPACK2 compliant \n• Insulated package: TO-220FPAC \n •Ins;

5.0 Ampere Surface Mount Single Positive Type Ultra Fast Recovery Rectifier Diode

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power

Ultrafast recovery - 1200 V diode

Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications in

Ultrafast recovery - 1200 V diode

Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications in

Ultrafast recovery - 1200 V diode

Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications in

Ultrafast recovery - 1200 V diode

Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications in

Ultrafast Rectifier

FEATURES ·1200V blocking voltage ·Ultrafast, soft recovery ·Very low conduction and switching losses ·High frequency and/or high pulsed current operation ·High junction temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·This pow

Ultrafast Rectifier

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封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 1.2KV 5A DPAK 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：TO-220-2 包装：管件 描述：DIODE GEN PURP 1.2KV 5A TO220AC 分立半导体产品 二极管 - 整流器 - 单

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Memory TAG IC 512 bit High Endurance EEPROM 13.56MHz, ISO 15693 Standard Compliant with E.A.S.

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TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo